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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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IRG4MC50F Datasheet(PDF) 2 Page - International Rectifier |
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IRG4MC50F Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com IRG4MC50F Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– ––– 290 IC = 30A Qge Gate - Emitter Charge (turn-on) ––– ––– 42 nC VCC = 480V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ––– ––– 97 VGE = 15V td(on) Turn-On Delay Time ––– ––– 50 TJ = 25°C tr Rise Time ––– ––– 25 IC = 30A, VCC = 480V td(off) Turn-Off Delay Time ––– ––– 350 VGE = 15V, RG = 2.35Ω tf Fall Time ––– ––– 300 Energy losses include "tail" Ets Total Switching Loss ––– ––– 3.0 mJ See Fig. 10, 11, 13, 14 td(on) Turn-On Delay Time ––– ––– 50 TJ = 125°C, tr Rise Time ––– ––– 25 ns IC = 30A, VCC = 480V td(off) Turn-Off Delay Time ––– ––– 475 VGE = 15V, RG = 2.35Ω tr Rise Time ––– ––– 400 Energy losses include "tail" Ets Total Switching Loss ––– ––– 6.0 mJ See Fig. 13, 14 LC+LE Total Inductance ––– 6.8 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) Cies Input Capacitance ––– 4100 ––– VGE = 0V Coes Output Capacitance ––– 250 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 49 ––– ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA V(BR)ECS Emitter-to-Collector Breakdown Voltage S 17 ––– ––– VVGE = 0V, IC = 1.0 A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.58 ––– V/°CVGE = 0V, IC = 1.0 mA ––– ––– 2.0 IC = 30A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– 2.2 V IC = 35A See Fig.2, 5 ––– ––– 1.9 IC = 30A , TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 1.0 mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11.8 ––– mV/°CVCE = VGE, IC = 250 µA gfe Forward Transconductance T 21 ––– ––– SVCE ≥ 15V, IC = 30A ––– ––– 250 VGE = 0V, VCE = 480V ––– ––– 2000 VGE = 0V, VCE = 480V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Notes: Q Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R V CC = 80%(VCES), VGE = 20V, L = 100µH, RG = 2.35Ω, (See fig. 13a) |
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