IRG4MC50F

INSULATED GATE BIPOLAR TRANSISTOR

E

C

G

n-channel

Features

Benefits

Parameter

Max.

Units

Collector-to-Emitter Breakdown Voltage

600

V

Continuous Collector Current

35*

Continuous Collector Current

30

A

Pulsed Collector Current ➀

➀

➀

➀

➀

140

Clamped Inductive Load Current ➁

➁

➁

➁

➁

140

Gate-to-Emitter Voltage

± 20

V

Maximum Power Dissipation

150

W

Maximum Power Dissipation

60

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

9.3 (typical)

g

Absolute Maximum Ratings

02/08/02

www.irf.com

1

Fast Speed IGBT

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

• Latch-proof

• Fast Speed operation 3 kHz - 8 kHz

• High operating frequency

• Switching-loss rating includes all "tail" losses

• Ceramic eyelets

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

IR Hi-Rel Generation 3 IGBT's

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-254AA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.83

°C/W

* Current is limited by internal wire diameter

PD -94274A