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IRG4MC50F Datasheet(PDF) 5 Page - International Rectifier |
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IRG4MC50F Datasheet(HTML) 5 Page - International Rectifier |
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5 / 8 page ![]() www.irf.com 5 IRG4MC50F Fig. 10 - Typical Switching Losses vs. Junction Temperature Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1 10 100 0 2000 4000 6000 8000 V , Collector-to-Emitter Voltage (V) CE V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GE ies ge gc , ce res gc oes ce gc Cies Coes Cres 0 10 20 30 40 50 RG, Gate Resistance (Ω) 2.00 2.50 3.00 VCC= 480V VGE = 15V TJ = 25°C I C= 30A -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 0.1 1 10 100 RG = 2.35Ω VGE = 15V VCC= 480V IC = 60A IC= 30A IC= 20A 0 40 80 120 160 200 0 4 8 12 16 20 Q , Total Gate Charge (nC) G V = 400V I = 30A CC C 480V |
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