Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

STH2N120K5-2AG Datasheet(PDF) 2 Page - STMicroelectronics

No. de pieza STH2N120K5-2AG
Descripción Electrónicos  Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH2N120K5-2AG Datasheet(HTML) 2 Page - STMicroelectronics

  STH2N120K5-2AG Datasheet HTML 1Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 2Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 3Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 4Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 5Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 6Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 7Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 8Page - STMicroelectronics STH2N120K5-2AG Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 14 page
background image
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
1.5
A
Drain current (continuous) at TC = 100 °C
1
IDM(1)
Drain current (pulsed)
2.5
A
PTOT
Total power dissipation at TC = 25 °C
60
W
dv/dt(2)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 1.5 A, di/dt = 100 A/μs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
3. VDS ≤ 960 V.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.08
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
30
1. When mounted on an 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR(1)
Avalanche current, repetitive or not repetitive
0.5
A
EAS(2)
Single pulse avalanche energy
80
mJ
1. Pulse width is limited by TJ max.
2. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.
STH2N120K5-2AG
Electrical ratings
DS12486 - Rev 5
page 2/14



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com