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STH2N120K5-2AG Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STH2N120K5-2AG
Descripción Electrónicos  Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package
PDF  14 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH2N120K5-2AG Datasheet(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
1200
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 1200 V
0.5
µA
VGS = 0 V, VDS = 1200 V, TC = 125 °C(1)
100
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 0.5 A
7.25
10
Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
124
-
pF
Coss
Output capacitance
-
13
-
Crss
Reverse transfer capacitance
-
0.5
-
Co(tr)(1)
Time-related equivalent
capacitance
VGS = 0 V, VDS = 0 to 960 V
-
15
-
pF
Co(er)(2)
Energy-related equivalent
capacitance
-
5
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
16
-
Ω
Qg
Total gate charge
VDD = 960 V, ID = 1.5 A, VGS = 0 to 10 V
(see Figure 13. Test circuit for gate
charge behavior)
-
5.3
-
nC
Qgs
Gate-source charge
-
0.8
-
Qgd
Gate-drain charge
-
3.5
-
1. Co(tr) is a constant capacitance value giving the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(er) is a constant capacitance value giving the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 600 V, ID = 0.75 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit for resistive
load switching times and
Figure 17. Switching time waveform)
-
10.3
-
ns
tr
Rise time
-
7.8
-
td(off)
Turn-off delay time
-
34
-
tf
Fall time
-
39
-
STH2N120K5-2AG
Electrical characteristics
DS12486 - Rev 5
page 3/14



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