STF8N60DM2 datasheet(1/13 Pages) STMICROELECTRONICS

No. de pieza	STF8N60DM2

Descripción Electrónicos	N-channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	13 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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November 2016

DocID027864 Rev 2

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This is information on a product in full production.

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STF8N60DM2

N-

channel 600 V, 550 mΩ typ., 8 A MDmesh™ DM2

Power MOSFET in a TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STF8N60DM2

600 V

600 mΩ

8 A

25 W



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STF8N60DM2

8N60DM2

TO-220FP

Tube

TO-220FP

AM15572v1_no_tab

D(2)

G(1)

S(3)

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STF8N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics

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