STF8N60DM2

Electrical ratings

DocID027864 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID(1)

8

A

5

IDM(2)

Drain current (pulsed)

32

A

25

W

dv/dt(3)

Peak diode recovery voltage slope

50

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

50

Insulation withstand voltage (RMS) from all three leads to external

2.5

kV

Storage temperature range

–55 to 150

°C

Operating junction temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

5

°C/W

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

2.5

A

EAS(2)

Single pulse avalanche energy

430

mJ

Notes: