BTA12-600TW datasheet(5/7 Pages) STMICROELECTRONICS

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BTA/BTB12 and T12 Series

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Fig. 4:

On-state characteristics (maximum

values).

Fig. 5: Surge peak on-state current versus

number of cycles.

Fig. 6:

Non-repetitive

surge peak on-state

current

for

sinusoidal

pulse

with

width

tp < 10ms, and corresponding value of I²t.

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 8-1: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values) (BW/CW/T1235).

Fig. 8-2: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values) (TW).

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

ITM (A)

Tj=25°C

Tj max

Tj max.

Vto = 0.85 V

Rd = 35 m

Ω

VTM(V)

100

1000

100

110

120

130

ITSM (A)

Non repetitive

Tj initial=25°C

Repetitive

Tc=90°C

One cycle

t=20ms

Number of cycles

0.01

0.10

1.00

10.00

100

1000

tp (ms)

ITSM (A), I²t (A²s)

Tj initial=25°C

ITSM

I²t

dI/dt limitation:

50A/µs

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]

IGT

IH & IL

Tj(°C)

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

BW/CW/T1235

(dV/dt)c (V/µs)

0.1

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.0

10.0

100.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dV/dt)c (V/µs)

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