STM32H7B3AI datasheet(92/238 Pages) STMICROELECTRONICS

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Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Vhyst_BOR_PVD

Hysteresis voltage of BOR

Hysteresis in Run mode

100

IDD_BOR_PVD(1)

BOR and PVD consumption from VDD

0.630

µA

IDD_POR_PDR

POR and PDR consumption from VDD

0.8

1.2

VAVM_0

Analog voltage detector for VDDA threshold 0

Rising edge

1.66 1.71

1.76

Falling edge

1.56 1.61

1.66

VAVM_1

Analog voltage detector for VDDA threshold 1

Rising edge

2.06 2.12

2.19

Falling edge

1.96 2.02

2.08

VAVM_2

Analog voltage detector for VDDA threshold 2

Rising edge

2.42 2.50

2.58

Falling edge

2.35 2.42

2.49

VAVM_3

Analog voltage detector for VDDA threshold 3

Rising edge

2.74 2.83

2.91

Falling edge

2.64 2.72

2.80

Vhyst_VDDA

Hysteresis of VDDA voltage detector

100

IDD_PVM

PVM consumption from VDD(1)

0.25

µA

IDD_VDDA

Voltage detector consumption on VDDA(1)

Resistor bridge

2.5

µA

1. Guaranteed by design.

6.3.6

Embedded reference voltage

The parameters given in Table 30 are derived from tests performed under ambient temperature and VDD supply

voltage conditions summarized in Table 22. General operating conditions.

Table 30. Embedded reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT(1)

Internal reference voltages

−40 °C < TJ < 130 °C

1.180 1.216 1.255

tS_vrefint(2)(3)

ADC sampling time when reading the internal

reference voltage

4.3

µs

tS_vbat(3)

VBAT sampling time when reading the internal

VBAT reference voltage

tstart_vrefint(3)

Start time of reference voltage buffer when

ADC is enable

4.4

µs

Irefbuf(3)

Reference Buffer consumption for ADC

VDD = 3.3 V

13.5

µA

ΔVREFINT(3)

Internal reference voltage spread over the

temperature range

−40 °C < TJ < 130 °C

Tcoeff

Average temperature coefficient

Average temperature

coefficient

ppm/°C

VDDcoeff

Average Voltage coefficient

3.0 V < VDD < 3.6 V

1370

ppm/V

VREFINT_DIV1

1/4 reference voltage

% VREFINT

VREFINT_DIV2

1/2 reference voltage

VREFINT_DIV3

3/4 reference voltage

1. Guaranteed by design and tested in production at 3.3 V

2. The shortest sampling time for the application can be determined by multiple iterations.

3. Guaranteed by design.

STM32H7B3xI

Operating conditions

DS13139 - Rev 8

page 92/238

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