BLF404 datasheet(6/16 Pages) PHILIPS

6 / 16 page

1998 Jan 29

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF404

APPLICATION INFORMATION

RF performance at Tmb ≤ 60 °C in a common source test circuit with the device soldered on a printed-circuit board with

through metallized holes.

Ruggedness in class-AB operation

The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb ≤ 60 °C.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

ηD

(%)

CW, class-AB

500

12.5

≥10

≥50

typ. 11.5

typ. 55

Fig.8

Power gain and drain efficiency as

functions of load power; typical values.

CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;

IDQ = 50 mA; Tmb ≤ 60 °C.

handbook, halfpage

0246

MGM520

PL (W)

(dB)

(%)

100

CW, class-AB operation; f = 500 MHz; VDS = 12.5 V;

IDQ = 50 mA; Tmb ≤ 60 °C.

Fig.9

Load power as a function of drive power;

typical values.

handbook, halfpage

600

MGM521

200

400

(W)

PD (mW)

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