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BLF404 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BLF404
Descripción Electrónicos  UHF power MOS transistor
PDF  16 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF404 Datasheet(HTML) 3 Page - NXP Semiconductors

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1998 Jan 29
3
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
40
V
VGS
gate-source voltage
−±20
V
ID
DC drain current
−
1.5
A
Ptot
total power dissipation
Tmb ≤ 85 °C
−
8.3
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
200
°C
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =85 °C.
handbook, halfpage
MGM522
10
1
10−1
110
102
VDS (V)
ID
(A)
(2)
(1)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
Tmb ≤ 85 °C, Ptot = 8.3 W
12.1
K/W



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