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GD10FSX65L4S Datasheet(PDF) 4 Page - StarPower Europe AG

No. de pieza GD10FSX65L4S
Descripción Electrónicos  650V/10A 6 in one-package
PDF  9 Pages
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Fabricante Electrónico  STARPOWER [StarPower Europe AG]
Página de inicio  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD10FSX65L4S Datasheet(HTML) 4 Page - StarPower Europe AG

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GD10FSX65L4S
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
10/29/2018
4/9
Preliminary
Diode-inverter Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VF
Diode Forward
Voltage
IC=10A,VGE=0V,Tj=25
oC
1.60
2.05
V
IC=10A,VGE=0V,Tj=125
oC
1.55
IC=10A,VGE=0V,Tj=150
oC
1.50
Qr
Recovered Charge
VR=300V,IF=10A,
-di/dt=1500A/
μs,V
GE=-15V
Tj=25
oC
0.50
μC
IRM
Peak Reverse
Recovery Current
18.0
A
Erec
Reverse Recovery
Energy
0.11
mJ
Qr
Recovered Charge
VR=300V,IF=10A,
-di/dt=1500A/
μs,V
GE=-15V
Tj=125
oC
0.85
μC
IRM
Peak Reverse
Recovery Current
19.0
A
Erec
Reverse Recovery
Energy
0.20
mJ
Qr
Recovered Charge
VR=300V,IF=10A,
-di/dt=1500A/
μs,V
GE=-15V
Tj=150
oC
1.10
μC
IRM
Peak Reverse
Recovery Current
21.0
A
Erec
Reverse Recovery
Energy
0.26
mJ
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
25
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
9.50
m
Ω
RthJC
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
1.664
2.173
1.830
2.390
K/W
RthCH
Case-to-Heatsink (per IGBT-inverter)
Case-to-Heatsink (per Diode-inverter)
Case-to-Heatsink (per Module)
0.816
1.065
0.077
K/W
F
Mounting Force Per Clamp
30
50
N
G
Weight of Module
10
g



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