STM32H523VCU6 datasheet(102/228 Pages) STMICROELECTRONICS

102 / 228 page

Electrical characteristics

STM32H523xx

102/228

DS14540 Rev 1

5.3.5

Embedded reference voltage

The parameters given in Table 24 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 19.

VAVD0

VDDA voltage monitor 0 threshold

Rising edge

1.66

1.71

1.76

Falling edge

1.56

1.61

1.66

VAVD1

VDDA voltage monitor 1threshold

Rising edge

2.06

2.12

2.19

Falling edge

1.96

2.02

2.08

VAVD2

VDDA voltage monitor 2 threshold

Rising edge

2.42

2.50

2.58

Falling edge

2.35

2.42

2.49

VAVD3

VDDA voltage monitor 3 threshold

Rising edge

2.74

2.83

2.91

Falling edge

2.64

2.72

2.80

VIO2VM

VDDIO2 voltage monitor threshold

0.9

Vhyst_AVD

Hysteresis of VDDA voltage monitor

100

IDD_AVD_IO2VM(2)

Power voltage detector consumption

from VDD (AVD, IO2VM)

0.25

µA

IDD_AVD_A(2)

VDDA analog voltage detector

consumption from VDDA (resistor bridge)

0.25

1. Evaluated by characterization and not tested in production, unless otherwise specified.

2. Specified by design - Not tested in production

Table 23. Embedded reset and power control block characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 24. Embedded reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT(1)

Internal reference voltage

-40 °C < TJ < +130 °C 1.180 1.216 1.255

tS_vrefint(2)(3)

ADC sampling time when reading the

internal reference voltage

-4.3

µs

tS_vbat

VBAT sampling time when reading the

internal VBAT voltage

tstart_vrefint(3)

Start time of reference voltage buffer

when the ADC is enabled

4.4

Irefbuf(3)

Reference buffer consumption for ADC VDD = 3.3 V

13.5

µA

∆VREFINT(3)

Internal reference voltage spread over

the temperature range

-40 °C < TJ < +130 °C

TCoeff

Average temperature coefficient

Average temperature

coefficient

-20

ppm/°C

VDDcoeff

Average voltage coefficient

3.0 V < VDD < 3.6 V

1370

ppm/V

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