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MPC5634M Datasheet(PDF) 64 Page - Freescale Semiconductor, Inc |
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MPC5634M Datasheet(HTML) 64 Page - Freescale Semiconductor, Inc |
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64 / 118 page ![]() MPC5634M Microcontroller Data Sheet, Rev. 4 Preliminary—Subject to Change Without Notice Electrical characteristics Freescale Semiconductor 64 3.4 EMI (Electromagnetic Interference) characteristics 3.5 Electromagnetic static discharge (ESD) characteristics Table 12. EMI testing specifications1 1 EMI testing and I/O port waveforms per SAE J1752/3 issued 1995-03. Symbol Parameter Conditions fOSC/fBUS Frequency Level (Max) Unit Radiated emissions, electric field VRE_TEM VDDREG =5.25V; TA =+25 °C 150 kHz – 30 MHz RBW 9 kHz, Step Size 5kHz 30 MHz – 1 GHz – RBW 120 kHz, Step Size 80 kHz 16 MHz crystal 40 MHz bus No PLL frequency modulation 150 kHz – 50 MHz 20 dB μV 50 – 150 MHz 20 150 – 500 MHz 26 500 – 1000 MHz 26 IEC Level K — SAE Level 3 — 16 MHz crystal 40 MHz bus +/-2% PLL frequency modulation 150 kHz– 50 MHz 13 dB μV 50 – 150 MHz 13 150 – 500 MHz 11 500 – 1000 MHz 13 IEC Level L — SAE Level 2 — Table 13. ESD ratings1,2 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification requirements, which includes the complete DC parametric and functional testing at room temperature and hot temperature.” Symbol Parameter Conditions Value Unit — SR ESD for Human Body Model (HBM) — 2000 V R1 SR HBM circuit description — 1500 Ω CSR — 100 pF — SR ESD for field induced charge Model (FCDM) All pins 500 V Corner pins 750 — SR Number of pulses per pin Positive pulses (HBM) 1 — Negative pulses (HBM) 1 — — SR Number of pulses — 1 — |
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