BD810 datasheet(1/5 Pages) ONSEMI

No. de pieza	BD810

Descripción Electrónicos	Plastic High Power Silicon Transistor

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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November, 2007 - Rev. 4

1

Publication Order Number:

BD809/D

BD809 (NPN), BD810 (PNP)

Plastic High Power

Silicon Transistor

These devices are designed for use in high power audio amplifiers

utilizing complementary or quasi complementary circuits.

Features

• DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

80

Vdc

Collector-Base Voltage

VCBO

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

90

720

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

-55 to +150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

qJC

1.39

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

POWER TRANSISTORS

80 VOLTS

90 WATTS

TO-220AB

CASE 221A-09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

BD8xx

=

Device Code

x = 09 or 10

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb-Free Package

2

3

BD8xxG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

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BD810 Datasheet(PDF) 1 Page - ON Semiconductor

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