BD810 datasheet(2/5 Pages) ONSEMI

No. de pieza	BD810

Descripción Electrónicos	Plastic High Power Silicon Transistor

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ONSEMI [ON Semiconductor]

Página de inicio	http://www.onsemi.com

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2 / 5 page

BD809 (NPN), BD810 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0)

BVCEO

Vdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

2.0

mAdc

DC Current Gain

(IC = 2.0 A, VCE = 2.0 V)

(IC = 4.0 A, VCE = 2.0 V)

hFE

Collector-Emitter Saturation Voltage (Note 1)

(IC = 3.0 Adc, IB = 0.3 Adc)

VCE(sat)

1.1

Vdc

Base-Emitter On Voltage (Note 1)

(IC = 4.0 Adc, VCE = 2.0 Vdc)

VBE(on)

1.6

Vdc

Current-Gain Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

1.5

MHz

1. Pulse Test: Pulse Width

x 300 ms, Duty Cycle x 2.0%.

Figure 1. Active Region DC Safe Operating Area

(see Note 1)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

100

0.3

5 ms

1 ms

.5 ms

1 ms

100

125

150

175

Figure 2. Power-Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

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