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BD810 Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza BD810
Descripción Electrónicos  Plastic High Power Silicon Transistor
PDF  5 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BD810 Datasheet(HTML) 4 Page - ON Semiconductor

  BD810 Datasheet HTML 1Page - ON Semiconductor BD810 Datasheet HTML 2Page - ON Semiconductor BD810 Datasheet HTML 3Page - ON Semiconductor BD810 Datasheet HTML 4Page - ON Semiconductor BD810 Datasheet HTML 5Page - ON Semiconductor  
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BD809 (NPN), BD810 (PNP)
http://onsemi.com
4
Figure 6. Thermal Response
t, PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
20
30
50
100
200 300
1000
500
qJC(t) = r(t) qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
Note 1:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device
Package
Shipping†
BD809
TO-220
50 Units / Rail
BD809G
TO-220
(Pb-Free)
BD810
TO-220
50 Units / Rail
BD810G
TO-220
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.



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