STPS200170TV1Y datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STPS200170TV1Y

2/7

Doc ID 17207 Rev 2

Characteristics

When the diodes are used simultaneously:

Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.5 x IF(AV) + 0.0018 IF

(RMS)

Table 2.

Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

IF(RMS)

Forward rms current

200

IF(AV)

Average forward current,

δ = 0.5

Tc = 105 °C per diode

100

IFSM

Surge non repetitive forward current tp = 10 ms sinusoidal

700

PARM

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

100000

Tstg

Storage temperature range

-55 to + 150

°C

Maximum operating junction temperature(1)

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

0.52

°C/W

Total

0.31

Rth(c)

Coupling thermal resistance

0.1

tot

---------------

th j

–

()

--------------------------

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

200

µA

Tj = 125 °C

100

(2)

Forward voltage drop

Tj = 25 °C

IF = 100 A

0.85

Tj = 150 °C

0.63

0.68

Tj = 25 °C

IF = 200 A

1.01

Tj = 150 °C

0.78

0.86

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

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