STPS200170TV1Y datasheet(3/7 Pages) STMICROELECTRONICS

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STPS200170TV1Y

Characteristics

Doc ID 17207 Rev 2

3/7

Figure 1.

Conduction losses versus average

current (per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

100

120

F(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=t /T

IF(AV)(A)

100

120

100

125

150

F(AV)(A)

δ=tp/T

th(j-a)=Rth(j-c)

Tamb(°C)

Figure 3.

Non-repetitive surge peak forward

current vesus overload duration

(maximum values per diode)

Figure 4.

Relative variation of thermal

impedance (junction to case) versus

pulse duration

100

200

300

400

500

600

700

800

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

d =0.5

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

(j )

δ=0.1

δ=0.2

δ=0.5

Single pulse

δ=tp/T

th -c /Rth -c

tP(s)

Figure 5.

Reverse leakage current versus

reverse voltage applied (typical

values per diode)

Figure 6.

Junction capacitances versus

reverse voltage applied (typical

values per diode)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

R(mA)

j=150°C

j=125°C

j=25°C

j=100°C

j=75°C

j=50°C

VR(V)

100

1000

10000

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

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