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INTEDG Datasheet(PDF) 118 Page - Microchip Technology |
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INTEDG Datasheet(HTML) 118 Page - Microchip Technology |
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118 / 478 page ![]() PIC16(L)F1946/47 DS41414D-page 118 2010-2012 Microchip Technology Inc. EXAMPLE 11-4: ERASING ONE ROW OF PROGRAM MEMORY - ; This row erase routine assumes the following: ; 1. A valid address within the erase block is loaded in ADDRH:ADDRL ; 2. ADDRH and ADDRL are located in shared data memory 0x70 - 0x7F (common RAM) BCF INTCON,GIE ; Disable ints so required sequences will execute properly BANKSEL EEADRL MOVF ADDRL,W ; Load lower 8 bits of erase address boundary MOVWF EEADRL MOVF ADDRH,W ; Load upper 6 bits of erase address boundary MOVWF EEADRH BSF EECON1,EEPGD ; Point to program memory BCF EECON1,CFGS ; Not configuration space BSF EECON1,FREE ; Specify an erase operation BSF EECON1,WREN ; Enable writes MOVLW 55h ; Start of required sequence to initiate erase MOVWF EECON2 ; Write 55h MOVLW 0AAh ; MOVWF EECON2 ; Write AAh BSF EECON1,WR ; Set WR bit to begin erase NOP ; Any instructions here are ignored as processor ; halts to begin erase sequence NOP ; Processor will stop here and wait for erase complete. ; after erase processor continues with 3rd instruction BCF EECON1,WREN ; Disable writes BSF INTCON,GIE ; Enable interrupts |
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