STS6409 datasheet(1/7 Pages) SAMHOP

No. de pieza	STS6409

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

-20V

-4.0A

50

@

VGS=-4.0V

49

@

VGS=-4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

P-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Aug,22,2012

1

Details are subject to change without notice.

STS6409

Ver 1.0

re

rr

P

Pr

P

P o

rr

THERMAL CHARACTERISTICS

100

Thermal Resistance, Junction-to-Ambient

R JA

a

°C/W

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

-20

-4.0

-15

V

±10

Gate-Source Voltage

Drain-Source Voltage

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

TA=25°C

W

PD

°C

1.25

-55 to 150

TA=25°C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

TA=70°C

-3.2

A

TA=70°C

0.8

W

a

ESD Protected.

58

@

VGS=-3.1V

52

@

VGS=-3.7V

65

@

VGS=-2.5V

S

G

D

SOT 26

Top View

D

G

D

S

1

2

3

6

5

4

D

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STS6409 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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