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STS6409 Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

No. de pieza STS6409
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6409 Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STS6409
Ver 1.0
www.samhop.com.tw
Aug,22,2012
4
0
0
8
20
16
1
0.8
0.6
0.4
0.2
-VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 4.5 V
3.1 V
3.7 V
2.5 V
0.01
0
0.1
100
10
1
2.5
2
1.5
1
0.5
-VGS - Gate to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
3
25
°C
75
°C
125
°C
TA = -25
°C
-50
1.0
0.8
0.4
150
100
50
0
Tch - Channel Temperature - °C
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
ID = -1.0mA
0.01
0.01
0.1
100
10
1
100
10
1
0.1
-ID - Drain Current - A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.9
TA = -25
°C
25
°C
75
°C
125
°C
0
20
80
60
40
100
10
1
0.1
-ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-3.1 V
0
0
20
80
60
40
8
6
4
2
-VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
ID = -4.0A
12
10
4.0 V
-3.7 V
0.5
0.6
0.7
4
12
-4.5 V
-4.0 V
VGS = -2.5 V



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