Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Mexican  ▼
ALLDATASHEET.COM.MX

X  

Preview PDF HTML

STS6409 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STS6409
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6409 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

  STS6409 Datasheet HTML 1Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 2Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 3Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 4Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 5Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 6Page - SamHop Microelectronics Corp. STS6409 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
1
IGSS
±10
uA
VGS(th)
-0.5
V
m ohm
VGS=-4.5V , ID=-2.0A
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=-1mA
VDS=-16V , VGS=0V
VGS=±10V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=-250uA
ON CHARACTERISTICS
STS6409
Ver 1.0
-0.7
-1.5
gFS
11
S
VSD
CISS
613
pF
COSS
159
pF
CRSS
141
pF
Qg
85
nC
225
nC
Qgs
1310
nC
Qgd
605
tD(ON)
11.8
ns
tr
0.85
ns
tD(OFF)
4.7
ns
tf
ns
Gate-Drain Charge
VDS=-10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-16V
ID=-2.0A
VGS=-4.5V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=-5V , ID=-2.0A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=-2.5V , ID=-2.0A
m ohm
c
f=1.0MHz
c
VDS=-16V,ID=-4.0A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-1.1A
-0.8
-1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
www.samhop.com.tw
Aug,22,2012
2
_
38
49
49
65
VGS=-3.1V , ID=-2.0A
m ohm
44
58
m ohm
VGS=-4.0V , ID=-2.0A
39
50
m ohm
VGS=-3.7V , ID=-2.0A
40
52
31
39
36
32
33



Html Pages

1 2 3 4 5 6 7


Datasheet Descarga

Go To PDF Page


Enlace URL



¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Enlace a la hoja de datos    |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com