STUD09N25 datasheet(1/10 Pages) SAMHOP

No. de pieza	STUD09N25

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	10 Pages

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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1 / 10 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

250

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω) Max

250V

7.5A

0.4 @ VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-252 and TO-251 Package.

N-Channel Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 1.0

www.samhop.com.tw

Sep,09,2013

1

Details are subject to change without notice.

TC=25°C

G

S

D

G

S

STU SERIES

TO - 252AA( D- PAK )

STD SERIES

TO - 251( I - PAK )

W

PD

°C

-55 to 150

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

2.4

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=100°C

A

TC=100°C

W

a

7.5

25

52

4.74

21

STU09N25

STD09N25

Green

Product

d

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STUD09N25 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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