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STUD09N25 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STUD09N25
Descripción Electrónicos  Super high dense cell design for low RDS(ON).
PDF  10 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD09N25 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
250
V
1
IGSS
±100
nA
VGS(th)
V
0.31
gFS
S
CISS
940
pF
COSS
58
pF
CRSS
39
pF
Qg
19.2
nC
21
29.2
14.3
tD(ON)
12.8
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=125V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=3.75A
VDS=10V , ID=3.75A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=200V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=10mA
Reverse Transfer Capacitance
ON CHARACTERISTICS
0.4
c
f=1.0MHz
c
www.samhop.com.tw
Sep,09,2013
2
VSD
nC
Qgs
nC
Qgd
1.7
4.3
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=125V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=4A
0.81
1.3
V
Notes
VDS=125V,ID=1A,VGS=10V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
_
_
_
11.9
3
6.5
STU09N25
STD09N25
Ver 1.0



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