STUD09N25 datasheet(3/10 Pages) SAMHOP

No. de pieza	STUD09N25

Descripción Electrónicos	Super high dense cell design for low RDS(ON).

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

Logo

3 / 10 page

STU09N25

STD09N25

Ver 1.0

www.samhop.com.tw

Sep,09,2013

Tj( °

C )

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

Tj=125 C

-55 C

25 C

0.90

0.75

0.60

0.45

0.30

0.15

2.5

2.2

1.9

1.6

1.3

1.0

100

125

150

V GS =10V

ID=3.75A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=10mA

V GS =10V

0.1

VGS=10V

VGS=5V

VGS=4V

VGS=3V

STUD09N25 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

STUD09N25 Datasheet(HTML) 3 Page - SamHop Microelectronics Corp.

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Descarga

Enlace URL