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RHFLVDS2281K1 Datasheet(PDF) 7 Page - STMicroelectronics |
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RHFLVDS2281K1 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() DocID027588 Rev 1 7/17 RHFLVDS2281 Electrical characteristics 17 4 Electrical characteristics Total dose (MIL-STD-883 TM 1019) The products guaranteed in radiation within the RHA QML-V system fully comply with the MIL-STD-883 TM 1019 specification. The RHFLVDS2281 is RHA QML-V, tested and characterized in full compliance with the MIL-STD-883 specification, between 50 and 300 rad/s only (full CMOS technology). All parameters provided in Table 7: Electrical characteristics table apply to both pre- and post-irradiation, as follows: All test are performed in accordance with MIL-PRF-38535 and test method 1019 of MIL-STD-883 for total ionizing dose (TID). The initial characterization is performed in qualification only on both biased and unbiased parts. Each wafer lot is tested at high dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification. Heavy ions The behavior of the product when submitted to heavy ions is not tested in production. Heavy-ion trials are performed on qualification lots only. Table 6. Radiations Type Characteristics Value Unit TID High-dose rate (50 - 300 rad/sec) 300 krad Heavy ions SEL immunity up to: (with a particle angle of 60 °, at 125 °C) 135 MeV.cm2/mg SEL immunity up to: (with a particle angle of 0 °, at 125 °C) 67 SET/SEU immunity up to: (at 25 °C) 22 |
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