STR710FZ2 datasheet(47/80 Pages) STMICROELECTRONICS

No. de pieza	STR710FZ2

Descripción Electrónicos	ARM7TDMI??32-bit MCU with Flash, USB, CAN, 5 timers, ADC, 10 communication interfaces

PDF	80 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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47 / 80 page

STR71xFxx STR710RZ

Electrical parameters

Doc ID 10350 Rev 13

47/80

4.3.3

Memory characteristics

Flash memory

V33 = 3.0 to 3.6V, TA = -40 to 85 °C unless otherwise specified.

Notes:

TA=45°C after 0 cycles. Guaranteed by characterization, not tested in production.

Guaranteed by design, not tested in production

Table 22.

Flash memory characteristics

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ

Max1)

tPW

Word Program

μs

tPDW

Double Word Program

μs

tPB0

Bank 0 Program (256K)

Double Word Program

1.6

2.1

tPB1

Bank 1 Program (16K)

Double Word Program

130

170

tES

Sector Erase (64K)

Not preprogrammed

Preprogrammed

2.3

1.9

4.0

3.3

tES

Sector Erase (8K)

Not preprogrammed

Preprogrammed

0.7

0.6

1.1

1.0

tES

Bank 0 Erase (256K)

Not preprogrammed

Preprogrammed

8.0

6.6

13.7

11.2

tES

Bank 1 Erase (16K)

Not preprogrammed

Preprogrammed

0.9

0.8

1.5

1.3

tRPD

Recovery when disabled

μs

tPSL

Program Suspend Latency

μs

tESL

Erase Suspend Latency

300

μs

NEND_B0

Endurance (Bank 0

sectors)

kcycles

NEND_B1

Endurance (Bank 1

sectors)

100

kcycles

tRET

Data Retention (Bank 0

and Bank 1)

TA=85°

Years

tESR

Erase Suspend Rate

Min time from Erase

Resume to next Erase

Suspend

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