STR710FZ2 datasheet(51/80 Pages) STMICROELECTRONICS

51 / 80 page

STR71xFxx STR710RZ

Electrical parameters

Doc ID 10350 Rev 13

51/80

4.3.5

I/O port pin characteristics

General characteristics

Subject to general operating conditions for V33 and TA unless otherwise specified. All

unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or

an external pull-up or pull-down resistor.

Notes:

Data based on characterization results, not tested in production.

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.

When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise

refer to IINJ(PIN) specification. A positive injection is induced by VIN>V33 while a negative injection is

induced by VIN<VSS. Refer to Section 4.2 on page 35 for more details.

Leakage could be higher than max. if negative current is injected on adjacent pins.

The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding

IPU and IPD current characteristics described in Figure 18 to Figure 19).

Table 27.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage 1)

CMOS ports

0.3V33

VIH

Input high level voltage 1)

0.7V33

Vhys

Schmitt trigger voltage hysteresis

0.8

VIL

Input low level voltage 1)

P0.15 WAKEUP

0.9

0.8

VIH

Input high level voltage 1)

21.35

Vhys

Schmitt trigger voltage hysteresis

0.4

VIL

Input low level voltage 1)

TTL ports

0.8

VIH

Input high level voltage 1)

2.0

IINJ(PIN) Injected Current on any I/O pin

± 4

ΣIINJ(PIN)

Total injected current (sum of all

I/O and control pins)

± 25

Ilkg

Input leakage current 4)

VSS≤VIN≤V33

±1

μA

RPU

Weak pull-up equivalent

resistor5)

VIN=VSS

110

150

700

RPD

Weak pull-down equivalent

resistor5)

VIN=V33

110

150

700

CIO

I/O pin capacitance

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