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AS4LC2M8S1 Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

No. de pieza AS4LC2M8S1
Descripción Electrónicos  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC2M8S1
AS4LC1M16S1
Recommended operating conditions
† V
IL Min = –1.5V for pulse widths less than 5 ns.
‡ I
OH = –2mA, and IOL = 2mA.
Recommended operating conditions apply throughout this document unless otherwise specified.
Absolute maximum ratings
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Min
Nominal
Max
Unit
Notes
Supply voltage
VCC,VCCQ
3.0
3.3
3.6
V
GND
0.0
0.0
0.0
V
Input voltage
VIH
2.0
–
VCC + 0.3
V
8
VIL
–0.3
†
–0.8
V
8
Output voltage‡
VOH
2.4
–
–
V
VOL
––
0.4
V
Ambient operating temperature
TA
070
°C
Parameter
Symbol
Min
Max
Unit
Notes
Input voltage
VIN,VOUT
–1.0
+4.6
V
Power supply voltage
VCC,VCCQ
–1.0
+4.6
V
Storage temperature (plastic)
TSTG
–55
+150
°C
Power dissipation
PD
–1
W
Short circuit output current
IOUT
–50
mA



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