AT25PE80 datasheet(23/63 Pages) DIALOG

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AT25PE80

DS-25PE80-141C-8/2018

Additional Commands

9.1

Main Memory Page to Buffer Transfer

A page of data can be transferred from the main memory to either Buffer 1 or Buffer 2. To transfer a page of data using

the optional DataFlash-L page size (264 bytes), an opcode of 53h for Buffer 1 or 55h for Buffer 2 must be clocked into the

device followed by three address bytes comprised of 3 dummy bits, 12 page address bits (PA11 - PA0) which specify the

page in main memory to be transferred, and 9 dummy bits. To transfer a page of data using the default page size (256

bytes), an opcode of 53h for Buffer 1 and 55h for Buffer 2 must be clocked into the device followed by three address

bytes comprised of 4 dummy bits, 12 page address bits (A19 - A8) which specify the page in the main memory to be

transferred, and 8 dummy bits.

The CS pin must be low while toggling the SCK pin to load the opcode and the three address bytes from the input pin

(SI). The transfer of the page of data from the main memory to the buffer will begin when the CS pin transitions from a

low to a high state. During the page transfer time (t

XFR), the RDY/BUSY bit in the Status Register can be read to

determine whether or not the transfer has been completed.

9.2

Main Memory Page to Buffer Compare

A page of data in main memory can be compared to the data in Buffer 1 or Buffer 2 as a method to ensure that data was

successfully programmed after a Buffer to Main Memory Page Program command. To compare a page of data with the

optional DataFlash-L page size (264 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2 must be clocked into the

device followed by three address bytes comprised of 3 dummy bits, 12 page address bits (PA11 - PA0) which specify the

page in the main memory to be compared to the buffer, and 9 dummy bits. To compare a page of data with the default

page size (256 bytes), an opcode of 60h for Buffer 1 or 61h for Buffer 2 must be clocked into the device followed by three

address bytes comprised of 4 dummy bits, 12 page address bits (A19 - A8) which specify the page in the main memory

to be compared to the buffer, and 8 dummy bits.

The CS pin must be low while toggling the SCK pin to load the opcode and the address bytes from the input pin (SI). On

the low-to-high transition of the CS pin, the data bytes in the selected Main Memory Page will be compared with the data

bytes in Buffer 1 or Buffer 2. During the compare time (t

COMP), the RDY/BUSY bit in the Status Register will indicate that

the part is busy. On completion of the compare operation, bit 6 of the Status Register will be updated with the result of the

compare.

9.3

Auto Page Rewrite

This command only needs to be used if the possibility exists that static (non-changing) data may be stored in a page or

pages of a sector and the other pages of the same sector are erased and programmed a large number of times.

Applications that modify data in a random fashion within a sector may fall into this category. To preserve data integrity of

a sector, each page within a sector must be updated/rewritten at least once within every 50,000 cumulative page

erase/program operations within that sector. The Auto Page Rewrite command provides a simple and efficient method to

“refresh” a page in the main memory array in a single operation.

The Auto Page Rewrite command is a combination of the Main Memory Page to Buffer Transfer and Buffer to Main

Memory Page Program with Built-In Erase commands. With the Auto Page Rewrite command, a page of data is first

transferred from the main memory to Buffer 1 or Buffer 2 and then the same data (from Buffer 1 or Buffer 2) is

programmed back into the same page of main memory, essentially “refreshing” the contents of that page. To start the

Auto Page Rewrite operation with the optional DataFlash-L page size (264 bytes), a 1-byte opcode, 58H for Buffer 1 or

59H for Buffer 2, must be clocked into the device followed by three address bytes comprised of 3 dummy bits, 12 page

address bits (PA11-PA0) that specify the page in main memory to be rewritten, and 9 dummy bits.

AT25PE80 Datasheet(PDF) 23 Page - Dialog Semiconductor

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