AT25PE80 datasheet(34/63 Pages) DIALOG

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AT25PE80

DS-25PE80-141C–8/2018

14.

Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which commands

can be executed at what times.

Group A commands consist of:

Main Memory Page Read

Continuous Array Read (SPI)

Read Sector Protection Register

Read Security Register

Buffer 1 (or 2) Read

Group B commands consist of:

Page Erase

Block Erase

Sector Erase

Chip Erase

Main Memory Page to Buffer 1 (or 2) Transfer

Main Memory Page to Buffer 1 (or 2) Compare

Buffer 1 (or 2) to Main Memory Page Program with Built-In Erase

Buffer 1 (or 2) to Main Memory Page Program without Built-In Erase

Main Memory Page Program through Buffer 1 (or 2) with Built-In Erase

10. Main Memory Byte/Page Program through Buffer 1 without Built-In Erase

11. Auto Page Rewrite

12. Read-Modify-Write

Group C commands consist of:

Buffer 1 (or 2) Write

Status Register Read

Manufacturer and Device ID Read

Group D commands consist of:

Erase Sector Protection Register

Program Sector Protection Register

Buffer and Page Size Configuration

If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be

started. However, during the internally self-timed portion of Group B commands, any command in Group C can be

executed. The Group B commands using Buffer 1 should use Group C commands using Buffer 2 and vice versa. Finally,

during the internally self-timed portion of a Group D command, only the Status Register Read command should be

executed.

AT25PE80 Datasheet(PDF) 34 Page - Dialog Semiconductor