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STM32F103XC Datasheet(PDF) 70 Page - STMicroelectronics |
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STM32F103XC Datasheet(HTML) 70 Page - STMicroelectronics |
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70 / 143 page ![]() Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 70/143 DS5792 Rev 13 Figure 27. Asynchronous multiplexed PSRAM/NOR write waveforms Table 34. Asynchronous multiplexed PSRAM/NOR write timings(1)(2) 1. CL = 15 pF. 2. BGuaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 5tHCLK – 1 5tHCLK + 2 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low 2tHCLK 2tHCLK + 1 ns tw(NWE) FSMC_NWE low time 2tHCLK – 1 2tHCLK + 2 ns th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time tHCLK – 1 - ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 7 ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 3 5 ns tw(NADV) FSMC_NADV low time tHCLK – 1 tHCLK + 1 ns th(AD_NADV) FSMC_AD (address) valid hold time after FSMC_NADV high tHCLK – 3 - ns th(A_NWE) Address hold time after FSMC_NWE high 4tHCLK -ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.6 ns th(BL_NWE) FSMC_BL hold time after FSMC_NWE high tHCLK – 1.5 - ns tv(Data_NADV) FSMC_NADV high to Data valid - tHCLK + 1.5 ns th(Data_NWE) Data hold time after FSMC_NWE high tHCLK – 5 - ns |
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