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STGP8M120DF3 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STGP8M120DF3
Descripción Electrónicos  Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP8M120DF3 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
IGBT140920161248PDT
150
100
50
0
0
50
100
150
P TOT
(W)
T C (°C)
V GE ≥ 15 V,
T J ≤ 175 °C
Figure 2. Collector current vs case temperature
IGBT140920161249CCT
16
12
8
4
0
0
50
100
150
I C
(A)
T C (°C)
V GE ≤ 15 V,
T J ≥ 175 °C
Figure 3. Output characteristics (TJ = 25 °C)
IGBT140920161249OC25
24
16
8
0
0
1
2
3
4
5
I C
(A)
V CE (V)
V GE = 15 V
13 V
11 V
9 V
7 V
Figure 4. Output characteristics (TJ = 175 °C)
IGBT140920161250OC175
24
16
8
0
0
1
2
3
4
5
I C
(A)
V CE (V)
V GE = 15 V
13 V
11 V
9 V
7 V
Figure 5. VCE(sat) vs junction temperature
IGBT140920161250VCET
3
2.5
2
1.5
1
-50
0
50
100
150
VCE(sat)
TJ (°C)
VGE = 15 V
IC = 16 A
IC = 8 A
IC = 4 A
Figure 6. VCE(sat) vs collector current
IGBT140920161250VCEC
3
2.5
2
1.5
1
0
4
8
12
VCE(sat)
IC (A)
VGE = 15 V
TJ = 175 °C
TJ = 25 °C
TJ = -40 °C
STGP8M120DF3
Electrical characteristics (curves)
DS11847 - Rev 2
page 5/15



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