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STGP8M120DF3 Datasheet(PDF) 2 Page - STMicroelectronics |
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STGP8M120DF3 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 15 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 1200 V IC Continuous collector current at TC = 25 °C 16 A Continuous collector current at TC = 100 °C 8 A ICP(1) Pulsed collector current 32 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 16 A Continuous forward current at TC = 100 °C 8 A IFP(1) Pulsed forward current 32 A PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.9 °C/W Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W STGP8M120DF3 Electrical ratings DS11847 - Rev 2 page 2/15 |
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