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STGP8M120DF3 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STGP8M120DF3
Descripción Electrónicos  Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP8M120DF3 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 8 A,
VGE = 15 V, RG = 33 Ω
(see Figure 28. Test circuit for
inductive load switching)
20
-
ns
tr
Current rise time
8.4
-
ns
(di/dt)on
Turn-on current slope
800
-
A/µs
td(off)
Turn-off-delay time
126
-
ns
tf
Current fall time
136
-
ns
Eon(1)
Turn-on switching energy
0.39
-
mJ
Eoff(2)
Turn-off switching energy
0.37
-
mJ
Ets
Total switching energy
0.76
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 8 A,
VGE = 15 V, RG = 33 Ω,
TJ = 175 °C
(see Figure 28. Test circuit for
inductive load switching)
19
-
ns
tr
Current rise time
9.8
-
ns
(di/dt)on
Turn-on current slope
656
-
A/µs
td(off)
Turn-off-delay time
134
-
ns
tf
Current fall time
222
-
ns
Eon(1)
Turn-on switching energy
0.66
-
mJ
Eoff(2)
Turn-off switching energy
0.58
-
mJ
Ets
Total switching energy
1.24
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 600 V, VGE = 15 V,
TJstart ≤ 150 °C
10
-
µs
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 8 A, VR = 600 V,
VGE = 15 V, RG = 33 Ω,
di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
-
103
-
ns
Qrr
Reverse recovery charge
-
0.87
-
µC
Irrm
Reverse recovery current
-
19.2
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
720
-
A/µs
Err
Reverse recovery energy
-
211
-
µJ
trr
Reverse recovery time
IF = 8 A, VR = 600 V,
VGE = 15 V, RG = 33 Ω,
TJ = 175 °C, di/dt = 840 A/µs
(see Figure 28. Test circuit for
inductive load switching)
-
280
-
ns
Qrr
Reverse recovery charge
-
1.9
-
µC
Irrm
Reverse recovery current
-
21.8
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
404
-
µJ
STGP8M120DF3
Electrical characteristics
DS11847 - Rev 2
page 4/15



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