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STGP8M120DF3 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGP8M120DF3
Descripción Electrónicos  Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP8M120DF3 Datasheet(HTML) 1 Page - STMicroelectronics

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1
2
3
TO-220
TAB
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
•
10 µs of minimum short-circuit withstand time
•
VCE(sat) = 1.85 V (typ.) @ IC = 8 A
•
Tight parameter distribution
•
Positive VCE(sat) temperature coefficient
•
Low thermal resistance
•
Soft and very fast recovery antiparallel diode
•
Maximum junction temperature: TJ = 175 °C
Applications
•
Industrial drives
•
UPS
•
Solar
•
Welding
•
General-purpose inverters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-
stop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where low-loss and
short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature
coefficient and tight parameter distribution result in safer paralleling operation.
Product status link
STGP8M120DF3
Product summary
Order code
STGP8M120DF3
Marking
G8M120DF3
Package
TO-220
Packing
Tube
Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
STGP8M120DF3
Datasheet
DS11847 - Rev 2 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


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