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STK184N4F7AG Datasheet(PDF) 1 Page - STMicroelectronics |
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STK184N4F7AG Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() LFPAK 5x6 TAB 2 3 4 1 G4S123DTAB_LFPAK D(TAB) G(4) S(1, 2, 3) Features Order code V DS RDS(on) max. ID STK184N4F7AG 40 V 2.0 mΩ 100 A • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STK184N4F7AG Product summary Order code STK184N4F7AG Marking 184N4F7AG Package LFPAK 5x6 Packing Tape and reel Automotive-grade N-channel 40 V, 1.6 mΩ typ., 100 A, STripFET™ F7 Power MOSFET in an LFPAK 5x6 package STK184N4F7AG Datasheet DS12627 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office. www.st.com |
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