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STK184N4F7AG Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STK184N4F7AG
Descripción Electrónicos  Automotive-grade N-channel 40 V, 1.6 mΩ typ., 100 A, STripFET™ F7 Power MOSFET in an LFPAK 5x6 package
PDF  13 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STK184N4F7AG Datasheet(HTML) 4 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG191220181227SOA
102
101
100
10-1
10-1
100
101
ID
(A)
VDS (V)
Operation in this area
is limited by RDS(on)
Single pulse, TC = 25 °C,
TJ ≤ 150 °C, VGS = 10 V
tp = 10 μs
tp = 1 ms
tp = 10 ms
tp = 100 μs
Figure 2. Thermal impedance
GADG191220181227ZTH
10 -1
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
K
tp (s)
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
Figure 3. Output characteristics
GADG191220181227OCH
125
100
75
50
25
0
0
1
2
3
4
5
ID
(A)
VDS (V)
VGS = 5 V
VGS = 6 V
VGS = 7 V
VGS = 8 V
VGS = 9, 10 V
Figure 4. Transfer characteristics
GADG191220181228TCH
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
ID
(A)
VGS (V)
VDS = 5 V
Figure 5. Gate charge vs gate-source voltage
GADG191220181228QVG
12
10
8
6
4
2
0
0
10
20
30
40
VGS
(V)
Qg (nC)
VDS = 20 V
ID = 100 A
Figure 6. Static drain-source on-resistance
GADG191220181229RID
1.8
1.7
1.6
1.5
1.4
1.3
1.2
0
20
40
60
80
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STK184N4F7AG
Electrical characteristics (curves)
DS12627 - Rev 2
page 4/13



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