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STL33N60M6 Datasheet(PDF) 5 Page - STMicroelectronics

No. de pieza STL33N60M6
Descripción Electrónicos  N-channel 600 V, 0.115 typ., 21 A MDmesh™ M6 Power MOSFET in a PowerFLAT™ 8x8 HV package
PDF  15 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL33N60M6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG200620181213SOA
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1 µs
tp =10 µs
tp =1 ms
tp =10 ms
tp =100 µs
Operation in this area is
limited by R DS(on)
single pulse
TJ≤150 °C
TC=25 °C
VGS=10 V
Figure 2. Thermal impedance
PowerFLAT8x8HVzth
10 -1
10 -2
10 -5
10 -4
10 -3
10 -2
K
t p (s)
Single pulse
δ =0.01
δ =0.1
δ =0.2
δ =0.5
δ =0.05
δ =0.02
Z th =K*R thj-c
δ=t p / Ƭ
tp
Ƭ
Figure 3. Output characteristics
GIPG150620181232OCH
70
60
50
40
30
20
10
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =7 V
VGS =6 V
VGS = 9, 10 V
VGS =5 V
VGS =8 V
Figure 4. Transfer characteristics
GIPG150620181233TCH
70
60
50
40
30
20
10
0
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GIPG150620181237QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
8
16
24
32
40
VGS
(V)
VDS
(V)
Qg (nC)
VDD = 480 V
ID = 25 A
VDS
Figure 6. Static drain-source on-resistance
GIPG260620180835RID
0.125
0.120
0.115
0.110
0.105
0
4
8
12
16
20
RDS(on)
(Ω)
ID (A)
VGS = 10 V
STL33N60M6
Electrical characteristics (curves)
DS12638 - Rev 3
page 5/15



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