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STL33N60M6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL33N60M6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Figure 7. Capacitance variations GIPG150620181232CVR 10 4 10 3 10 2 10 1 10 0 10 -1 10 0 10 1 10 2 C (pF) VDS (V) CISS COSS CRSS f = 1 MHz Figure 8. Normalized gate threshold voltage vs temperature GIPG150620181230VTH 1.1 1.0 0.9 0.8 0.7 0.6 -75 -25 25 75 125 VGS(th) (norm.) TJ (°C) ID = 250 μA Figure 9. Normalized on-resistance vs temperature GIPG150620181231RON 2.5 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 RDS(on) (norm.) VGS = 10 V TJ (°C) Figure 10. Normalized V(BR)DSS vs temperature GIPG150620181231BDV 1.08 1.04 1.00 0.96 0.92 0.88 -75 -25 25 75 125 V(BR)DSS (norm.) ID = 1 mA TJ (°C) Figure 11. Output capacitance stored energy GADG200620181116EOS 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) Figure 12. Source-drain diode forward characteristics GIPG260620180841SDF 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 4 8 12 16 20 VSD (V) ISD (A) Tj = -50 °C Tj = 25 °C Tj = 150 °C STL33N60M6 Electrical characteristics (curves) DS12638 - Rev 3 page 6/15 |
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