T1235T-8I datasheet(5/9 Pages) STMICROELECTRONICS

5 / 9 page

T1235T-8I

Characteristics

DocID030976 Rev 2

5/9

Figure 8: Surge peak on-state current versus

number of cycles

Figure 9: Non repetitive surge peak on-state

current for a sinusoidal pulse with width tp < 10 ms

Figure 10: On-state characteristics (maximum

values)

Figure 11: Relative variation of critical rate of

decrease of main current versus junction

temperature

Figure 12: Relative variation of static dV/dt

immunity versus junction temperature

Figure 13: Relative variation of leakage current

versus junction temperature for different values of

blocking voltage

100

1000

ITSM(A)

Number of cycles

Repetitive

Tc = 114°C

Non repetitive

Tj initial = 25 °C

t=20ms

O ne c yc le

100

1000

0.01

0.10

1.00

10.00

ITSM(A)

t (ms)

T initial=25°C

ITSM

dI/dt limitation:

100A/µs

100

ITM(A)

VTM(V)

Tj max.

Vto = 0.85 V

Rd = 50 mΩ

Tj = 150 °C

Tj = 25 °C

100

125

150

(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]

Tj(°C)

100

125

150

dV/dt [Tj] / dV/dt [Tj = 150 °C]

Tj(°C)

VD = VR = 402 V

1.0E-03

1.0E-02

1.0E-01

1.0E+00

100

125

150

Tj(°C)

VDRM = VRRM = 800 V

VDRM = VRRM = 600 V

*[Tj max = 125 °C; VDRM, VRRM = 800 V]

[Tj max = 150 °C; VDRM, VRRM = 600 V]

IDRM, IRRM at [Tj] / IDRM, IRRM at [Tj max.]*

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