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T1235T-8I Datasheet(PDF) 4 Page - STMicroelectronics |
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T1235T-8I Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics T1235T-8I 4/9 DocID030976 Rev 2 1.1 Characteristics (curves) Figure 2: Maximum power dissipation versus on-state RMS current Figure 3: On-state RMS current versus case temperature Figure 4: On-state RMS current versus ambient temperature (free air convection) Figure 5: Relative variation of thermal impedance versus pulse duration Figure 6: Relative variation of gate trigger voltage and current versus junction temperature (typical values) Figure 7: Relative variation of holding current and latching current versus junction temperature (typical values) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 P(W) IT(RMS)(A) α = 180° 180° 0 4 8 12 16 0 25 50 75 100 125 150 IT(RMS)(A) Tc(°C) α = 180° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 IT(RMS)(A) Ta(°C) α = 180° 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 K = [Zth/Rth] tp(s) Zth(j-c) Zth(j-a) 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] Tj (°C) IGT Q3 VGT Q1-Q2-Q3 IGT Q1-Q2 -50 -25 0 150 0.0 0.5 1.0 1.5 25 50 75 100 125 IH,IL [Tj] / IH,IL [Tj = 25 °C] Tj (°C) IH IL |
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