Characteristics

T1235T-8I

2/9

DocID030976 Rev 2

1

Characteristics

Table 2: Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 114 °C

12

A

ITSM

Non repetitive surge peak on-state current,

Tj initial = 25 °C

tp = 16.7 ms

95

A

tp = 20 ms

90

I2t

I2t value for fusing

Tj initial = 25 °C

54

A2s

dl/dt

Critical rate of rise of on-state current,

IG = 2 x IGT, tr ≤ 100 ns

f = 100 Hz

100

A/µs

VDRM/VRRM Repetitive peak off-state voltage

Tj = 150 °C

600

V

Tj = 125 °C

800

V

VDSM/VRSM Non Repetitive peak off-state voltage

tp = 10 ms

900

V

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 150 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +150

°C

TL

Maximum lead temperature for soldering during 10 s

260

°C

Vins

Insulation RMS voltage, 1 minute, UL1557 certified (E81734)

2.5

kV

Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test

conditions

Quadrants; Tj

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

I - II - III

Min.

1.75

mA

VD = 12 V, RL = 33 Ω

I - II - III

Max.

35

mA

VGT

VD = 12 V, RL = 33 Ω

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C

I - II - III

Min.

0.2

V

IL

IG = 1.2 x IGT

I - III

Max.

60

mA

IG = 1.2 x IGT

II

Max.

80

mA

IH(1)

IT = 500 mA, gate open

Max.

40

mA

dV/dt(1)

VD = 536 V, gate open

Tj = 125 °C

Min.

2000

V/µs

VD = 402 V, gate open

Tj = 150 °C

Min.

1000

V/µs

(dl/dt)c(1)

Without snubber, (dV/dt)c > 20 V/µs

Tj = 125 °C

Min.

12

A/ms

Tj = 150 °C

Min.

6

A/ms

Notes:

(1)For both polarities of A2 referenced to A1.