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STM32H7B3AI Datasheet(PDF) 111 Page - STMicroelectronics

No. de pieza STM32H7B3AI
Descripción Electrónicos  32-bit Arm® Cortex®-M7 280 MHz MCUs, 2-Mbyte flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  238 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7B3AI Datasheet(HTML) 111 Page - STMicroelectronics

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Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PT jitter(2)
Paired transition jitter Accumulated jitter on 56 cycles(6)
-
-
± 0.25
-
ns
1. Calibrated during manufacturing tests.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. ΔfHSI = ACCHSI48_REL + ΔVDD
5. These values are obtained by using the formula: (Freq(3.6 V) − Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) − Freq(1.62 V)) / Freq(1.62 V).
6. Jitter measurements are performed without clock sources activated in parallel.
64 MHz high-speed internal RC oscillator (HSI)
Table 52. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min(1) Typ(1) Max(1) Unit
fHSI
HSI frequency
VDD=3.3 V, TJ=30 °C
63.7(2)
64
64.3(2) MHz
TRIM
HSI user trimming step
Trimming is not a multiple of 32(3)
-
0.24
0.32
%
Trimming is 128, 256 and 384(3)
−5.2
−1.8
-
Trimming is 64, 192, 320 and 448(3)
−1.4
−0.8
-
Other trimming are a multiple of 32 (not
including multiple of 64 and 128)(3)
−0.6
−0.25
-
DuCy(HSI) Duty Cycle
-
45
-
55
%
ΔVDD (HSI)
HSI oscillator frequency drift over VDD (reference
is 3.3 V)
VDD=1.62 to 3.6 V
−0.12
-
0.03
%
ΔTEMP (HSI)
HSI oscillator frequency drift over temperature
(reference is 64 MHz)
TJ=-20 to 105 °C
−1(4)
-
1(4)
%
TJ=−40 to TJmax °C
−2(4)
-
1(4)
tsu(HSI)
HSI oscillator start-up time
-
-
1.4
2
µs
tstab(HSI) HSI oscillator stabilization time
at 1 % of target frequency
-
4
8
µs
at 5 % of target frequency
-
-
4
IDD(HSI)
HSI oscillator power consumption
-
-
300
400
µA
1. Guaranteed by design, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Trimming value of HSICAL[8:0] (refer to RM0455).
4. Guaranteed by characterization results.
4 MHz low-power internal RC oscillator (CSI)
Table 53. CSI oscillator characteristics
Symbol
Parameter
Conditions
Min(1) Typ(1) Max(1) Unit
fCSI
CSI frequency
VDD = 3.3 V, TJ = 30 °C
3.96(2)
4
4.04(2) MHz
TRIM
CSI user trimming step
Trimming is not a multiple of 16
-
0.40
0.75
-
Trimming is a multiple of 32
−4,75 −2,75
0.75
-
Other trimming are a multiple of 16 (not
including multiple of 32)
−0,43
0.00
0.75
%
DuCy(CSI)
Duty Cycle
-
45
-
55
%
∆TEMP (CSI)
CSI oscillator frequency drift over temperature
TJ = 0 to 85 °C
−3.7(3)
-
4,5(3)
%
TJ = −40 to 130 °C
−11(3)
-
7,5(3)
STM32H7B3xI
Operating conditions
DS13139 - Rev 8
page 111/238



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