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STM32H7B3AI Datasheet(PDF) 117 Page - STMicroelectronics

No. de pieza STM32H7B3AI
Descripción Electrónicos  32-bit Arm® Cortex®-M7 280 MHz MCUs, 2-Mbyte flash memory, 1.4-Mbyte RAM, 46 com. and analog interfaces, SMPS, crypto
PDF  238 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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6.3.15
I/O current injection characteristics
As a general rule, a current injection to the I/O pins, due to external voltage below VSS or above VDD (for
standard, 3.3 V-capable I/O pins) should be avoided during the normal product operation. However, in order
to give an indication of the robustness of the microcontroller in cases when an abnormal injection accidentally
happens, susceptibility tests are performed on a sample basis during the device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins
programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked
for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE),
out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other
functional failure (for example reset, oscillator frequency deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
Table 64. I/O current injection susceptibility
Symbol
Description
Functional susceptibility
Unit
Negative injection Positive injection
IINJ
PF2, PI12
0
NA
mA
PG1, PE9, PB0, PA7, PC4, PC5, PE7, PE8, PA4, PA5, PA6, PF2, PI12, PC2_C,
PC3_C, PA0_C, PA1_C, BOOT0
0
0
All other I/Os
5
NA
6.3.16
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 65. I/O static characteristics are derived from tests
performed under the conditions summarized in Table 22. General operating conditions. All I/Os are CMOS and
TTL compliant (except for BOOT0).
Note:
For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO configuration for
hardware settings and low-power consumption” available from the ST website www.st.com.
Table 65. I/O static characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VIL
I/O input low-level voltage except BOOT0
1.62 V < VDDIOx < 3.6 V
-
-
0.3VDD (1)
V
I/O input low-level voltage except BOOT0
-
-
0.4VDD−0.1(2)
BOOT0 I/O input low level voltage
-
-
0.19VDD+0.1(2)
VIH
I/O input high level voltage except BOOT0
1.62 V < VDDIOx < 3.6 V
0.7VDD (1)
-
-
V
I/O input high level voltage except BOOT0
0.47VDD+0.25(2)
-
-
BOOT0 I/O input high level voltage
0.17VDD+0.6(2)
-
-
VHYS(2)
TT_xx, FT_xxx and NRST I/O input hysteresis
1.62 V < VDDIOx < 3.6 V
-
250
-
mV
BOOT0 I/O input hysteresis
-
200
-
Ilkg
FT_xx input leakage current(2)
0 < VIN ≤ Max(VDDxxx)(5)
-
-
±250
nA
Max(VDDxxx) < VIN ≤ 5.5 V (3)(4)(5)
-
-
1500
FT_u I/O
0 < VIN ≤ Max(VDDxxx)(5)
-
-
±350
STM32H7B3xI
Operating conditions
DS13139 - Rev 8
page 117/238



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