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STM32H7B3AI Datasheet(PDF) 120 Page - STMicroelectronics |
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STM32H7B3AI Datasheet(HTML) 120 Page - STMicroelectronics |
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120 / 238 page ![]() Symbol Parameter Conditions(1) Min Max Unit VOL(3) V Output low level voltage TTL port(2) IIO = 3 mA, 2.7 V≤ VDD ≤ 3.6 V - 0.4 VOH(3) Output high level voltage TTL port(2) IIO=−3 mA, 2.7 V ≤ VDD ≤ 3.6 V 2.4 - VOL(3) Output low level voltage IIO = 1.5 mA, 1.62 V ≤ VDD ≤ 3.6 V - 0.4 VOH (3) Output high level voltage IIO = −1.5 mA, 1.62 V ≤ VDD < 3.6 V VDD−0.4 - 1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 19. Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always respect the absolute maximum ratings ΣIIO. 2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52. 3. Guaranteed by design. Output buffer timing characteristics (HSLV option disabled) The HSLV bit of SYSCFG_CCCSR register can be used to optimize the I/O speed when the product voltage is below 2.7 V. Table 68. Output timing characteristics (HSLV OFF) The frequency of the GPIOs that can be supplied in VBAT mode (PC13, PC14, PC15 and PI8) is limited to 2 MHz. Speed Symbol Parameter conditions Min(1) Max(1) Unit 00 Fmax(2) Maximum frequency C=50 pF, 2.7 V≤ VDD≤3.6 V - 12 MHz C=50 pF, 1.62 V≤VDD≤2.7 V - 3 C=30 pF, 2.7 V≤VDD≤3.6 V - 12 C=30 pF, 1.62 V≤VDD≤2.7 V - 3 C=10 pF, 2.7 V≤VDD≤3.6 V - 16 C=10 pF, 1.62 V≤VDD≤2.7 V - 4 tr/tf (3) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤ VDD≤3.6 V - 16.6 ns C=50 pF, 1.62 V≤VDD≤2.7 V - 33.3 C=30 pF, 2.7 V≤VDD≤3.6 V - 13.3 C=30 pF, 1.62 V≤VDD≤2.7 V - 25 C=10 pF, 2.7 V≤VDD≤3.6 V - 10 C=10 pF, 1.62 V≤VDD≤2.7 V - 20 01 Fmax(2) Maximum frequency C=50 pF, 2.7 V≤ VDD≤3.6 V - 60 MHz C=50 pF, 1.62 V≤VDD≤2.7 V - 15 C=30 pF, 2.7 V≤VDD≤3.6 V - 80 C=30 pF, 1.62 V≤VDD≤2.7 V - 15 C=10 pF, 2.7 V≤VDD≤3.6 V - 110 C=10 pF, 1.62 V≤VDD≤2.7 V - 20 tr/tf (3) Output high to low level fall time and output low to high level rise time C=50 pF, 2.7 V≤ VDD≤3.6 V - 5.2 ns C=50 pF, 1.62 V≤VDD≤2.7 V - 10 C=30 pF, 2.7 V≤VDD≤3.6 V - 4.2 C=30 pF, 1.62 V≤VDD≤2.7 V - 7.5 C=10 pF, 2.7 V≤VDD≤3.6 V - 2.8 C=10 pF, 1.62 V≤VDD≤2.7 V - 5.2 STM32H7B3xI Operating conditions DS13139 - Rev 8 page 120/238 |
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