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STM32H7B3AI Datasheet(PDF) 215 Page - STMicroelectronics |
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STM32H7B3AI Datasheet(HTML) 215 Page - STMicroelectronics |
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215 / 238 page ![]() Table 140. UFBGA169 - Mechanical data Symbol millimeters inches (1) Min. Typ. Max. Min. Typ. Max. A(2) - - 0.600 - - 0.0236 A1 - - 0.110 - - 0.0043 A2 - 0.130 - - 0.0051 - A4 - 0.320 - - 0.0126 - b(3) 0.230 0.280 0.330 0.0091 0.0110 0.0130 D 6.850 7.000 7.150 0.2697 0.2756 0.2815 D1 - 6.000 - - 0.2362 - E 6.850 7.000 7.150 0.2697 0.2756 0.2815 E1 - 6.000 - - 0.2362 - e - 0.500 - - 0.0197 - F - 0.500 - - 0.0197 - ddd - - 0.080 - - 0.0031 eee (4) - - 0.015 - - 0.0059 fff(5) - - 0.050 - - 0.0020 1. Values in inches are converted from mm and rounded to four decimal digits. 2. • Ultra Thin profile: 0.50 < A ≤ 0.65 mm / Fine pitch: e < 1.00 mm pitch. • The total profile height (dim A) is measured from the seating plane to the top of the component • The maximum total package height is calculated by the following methodology: • A Max = A1 Typ + A2 Typ + A4 Typ + √ (A1²+A2²+A4² tolerance values) 3. The typical balls diameters before mounting is 0.20 mm. 4. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. 5. The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained entirely in the respective zone eee above The axis of each ball must lie simultaneously in both tolerance zones. Figure 107. UFBGA169 - Recommended footprint Dsm Dpad STM32H7B3xI UFBGA169 package information DS13139 - Rev 8 page 215/238 |
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