STV300NH02L datasheet(3/9 Pages) STMICROELECTRONICS

No. de pieza	STV300NH02L

Descripción Electrónicos	N-channel 24V - 0.8mOHM - 280A - PowerSO-10 STripFET TM Power MOSFET

PDF	9 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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STV300NH02L

Electrical characteristics

3/9

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 3.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tc=125°C

µA

IGSS

Gate body leakage

current (VDS = 0)

VDS = ± 20V

±100

VGS(th)

Gate threshold voltage VDS= VGS, ID = 250µA

11.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 80A

0.8

Ω

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 80A @100°C

1.1

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, f = 1 MHz, VGS =0

7055

3251

307

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 12V, ID= 120A,

VGS= 10V

(see Figure 2)

109.4

30.2

26.4

Gate input resistance

VDS = 0V, f = 1 MHz, VGS =0

4.4

Ω

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