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STV300NH02L Datasheet(PDF) 4 Page - STMicroelectronics |
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STV300NH02L Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Electrical characteristics STV300NH02L 4/9 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 12V, ID = 60A RG= 4.7Ω, VGS= 10V, (see Figure 1) 18 275 ns ns td(off) tf Turn-off delay time Fall time VDD = 12V, ID = 60A RG= 4.7Ω, VGS= 10V, (see Figure 1) 138 94.4 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) 300 1200 A A VSD (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 120A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120A,di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 6) 63 85 2.7 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120A,di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 6) 63.2 88 2.8 ns nC A |
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